IEEE Transactions on Industrial Electronics Volume: 63 , Issue: 4 , Apr. 2016 , pp. 2103-2110
Dominant Model Parameter Extraction for Analyzing Current Imbalance in Parallel Connected SiC MOSFETs
Geometry Independent Hole Injection Current Model of GaN Ridge HEMTs
Hitoshi Aoki(Teikyo Heisei University)
The Compact model of GaN Ridge HEMTs, especially the drain current increase due to gate injection, has been improved from the one presented at APEC2020, and a scalable model equation has been derived by considering the physical generation mechanism. In addition, we analized the effect of the current gain H21 on the frequency response when the device is operated in AC. With this model, the H21 characteristics in the current-increasing region due to gate injection agreed with the actual measurement with high accuracy.
30th International Symposium on Industrial Electronics (ISIE2021)
EV driving pattern simulation with PLECS
We propose a results of a simple motor inverter simulation with WLTC droving mode using PLECS. PLECS is the simulation platform of power electric systems.
TLP Bonding process using In coated Cu sheet for high-temperature dieattach
Hiroshi Nishikawa（Osaka University）
In coated Cu substrate was used as a low melting temperature bonding. We optimized the joint condition such as a temperature, pressure and process.
Direct Observation of PZT thin film actuator cantilever displacement
Development of the Third-Generation Wireless In-wheel Motor
Osamu Shimizu（The University of Tokyo)
The third-generation wireless in-wheel motor (W-IWM3) which has the capability of the Dynamic Wireless Power Transfer (D-WPT) on its wheel side has been developed for the Electric Vehicles. Developing concepts of W-IWM3 targeting “all components in wheel” is realized. One of the factors for “all components in wheel” is the small silicon-carbide (SiC) power device authors have developed. This paper showed the test result that the more than 18kW output with 95.2% DC to DC efficiency was achieved.
EVTeC 2021 5th International Electric Vehicle Technology Conference 2021
A High-Speed and High-Accuracy SiC MOSFET Model for Simulating Practical Power Circuits
We propose a SiC MOSFET model for circuit simulation. We validated the accuracy of the proposed model by measured switching waveforms of an inductive load switching evaluation circuit. Simulation speed of the model has been validated by a three-phase inverter simulation. Excellent results have been observed for both accuracy and speed.
Characterization of Mechanical Properties of Pb-2Sn-2.5Ag Solder Using Instrumented Indentation Microscopy with Optically Transparent Indenter
Pb-2Sn-2.5Ag alloy solder is one of the most popular materials for die attach in electronic devices, however its mechanical properties have not been reported. In this study, we measured the visco-elasto-plastic properties of Pb-2Sn-2.5Ag solder using Instrumented Indentation microscopy with an optically transparent indenter.
22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems
Study of the Microstructure and the Mechanical Properties of Pb-2.0Sn-2.5Ag Solder Joint
Since high lead solder has been used in industry for many years, few basic studies have been reported that discuss the microstructure and mechanical properties. In this study, the relationship between the microstructure and mechanical properties of high lead solder joints was investigated.
2021 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM
Evaluation of combined lasing characteristics of monolithic array of photonic-crystal lasers
Efficient Coupling Between Valley Photonic Crystals Waveguide and Resonant Tunneling Diode
Yuishiro Yamagami (Osaka University)
Terahertz Pulse Induced Harmonic Generation in Resonant Tunneling Diode Oscillator
Takashi Arikawa (Kyoto University)
Wireless Communications and Development of Practical Packeges using Resonant Tunneling Diodes
Prospects For Long-range Terahertz Imaging Techniques
Li Yi (Osaka University)
Two-dimensional Imaging System using a Single Resonant Tunneling Diode Transceiver
Ryoko Mizuno (Osaka University)
Ageing Monitoring of GaN Transistors using Recurrent Neural Networks
Developping a method to track GaN transistor degradation over time with recurrent neural networks. From measurements easily obtained during the normal operation of the transistor we can detect if the behavior is standard or if there is an anomaly. This method should enable live monitoring of device health.
Imaging Applications with a Single Resonnant Tunneling Diode Transceiver at 300GHz Band
Li Yi (Osaka University)
We employed a single resonant tunneling diode as both a transmitter and a receiver simultaneously, and demonstrated its impact in terahertz imaging applications.It leads to simplify terahertz imaging systems.